Power Amplifier. MAAP-011140-DIE Datasheet

MAAP-011140-DIE Amplifier. Datasheet pdf. Equivalent

MAAP-011140-DIE Datasheet
Recommendation MAAP-011140-DIE Datasheet
Part MAAP-011140-DIE
Description Power Amplifier
Feature MAAP-011140-DIE; MAAP-011140-DIE Power Amplifier, 6 W 27.5 - 30.0 GHz Features  High Gain: 24 dB  P1dB: 37.5 dBm  .
Manufacture MA-COM
Datasheet
Download MAAP-011140-DIE Datasheet




MA-COM MAAP-011140-DIE
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Features
High Gain: 24 dB
P1dB: 37.5 dBm
PSAT: 38.5 dBm
IM3 Level: -24 dBc @ POUT = 33 dBm/tone
Power Added Efficiency: 23% @ PSAT
Return Loss: 12 dB
Bare Die Dimensions: 3.6 x 3.8 x 0.05 mm
RoHS* Compliant
Description
The MAAP-011140-DIE is a 4-stage, 6 W power
amplifier in bare die form. This power amplifier
operates from 27.5 to 30.0 GHz and provides 24 dB
of linear gain, 6 W saturated output power, and 23%
efficiency while biased at 6 V.
The MAAP-011140-DIE is a power amplifier ideally
suited for VSAT communications.
This product is fabricated using a GaAs pHEMT
device process which features full passivation for
enhanced reliability.
Ordering Information
Part Number
MAAP-011140-DIE
1. Die quantity varies
Package
Die in Gel Pack1
Functional Diagram
345
Vd1 GND Vd2
67
Vd3 GND
8
Vd4
Rev. V2
2 GND
1 RFIN
18 GND
Backside Die
GND
GND 9
RFOUT 10
GND 11
Vg GND
17 16
GND
15
Vd3 GND Vd4
14 13
12
Pin Configuration2
Pad Function Description
1 RFIN RF Input
2, 4, 7, 9, 11,
13, 15, 16, 18
& backside
3
GND
VD1
Ground
Drain Voltage Stage 1
5 VD2 Drain Voltage Stage 2
6, 14
VD3 Drain Voltage Stage 3
8, 12
VD4 Drain Voltage Stage 4
10 RFOUT RF Output
17 VG Gate Voltage
2. Backside metal is RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support



MA-COM MAAP-011140-DIE
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V2
Electrical Specifications3: Freq. = 30 GHz, TC = +25°C, VD = +6 V, Z0 = 50 Ω
Parameter
Test Conditions
Units Min.
Typ.
Max.
Gain
PIN = 0 dBm
dB 22
24
POUT
PIN = 17 dBm
dBm
36.0
37.5
IM3 Level
POUT = 33 dBm / tone
dBc -24
Power Added Efficiency
PSAT (PIN = 17 dBm)
%
23
Input Return Loss
PIN = -20 dBm
dB
12
Output Return Loss
PIN = -20 dBm
dB
12
Quiescent Current
IDQ (see bias conditions, page 5 )
mA 3000
Current
PSAT (PIN = 17 dBm)
mA 5250
3. Specifications apply to MMIC die with two RF input and two RF output bond wires, and tested with 50 Ω GSG probes. Further performance
tuning to optimize the RF input and RF output impedance matching is shown on Recommended Bonding Diagram and PCB Layout Detail
(pg. 4). Typical performance curves are achieved by using the recommended bonding diagram and PCB layout detail.
Maximum Operating Ratings
Parameter
Rating
Input Power
Junction Temperature4,5
+19 dBm
+160°C
Operating Temperature
-40°C to +85°C
4. Operating at nominal conditions with TC ≤ +160°C will ensure
MTTF > 1 x 106 hours.
5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (Pout - PIN))
Typical thermal resistance (ӨJC) = 3.4°C/W.
a) For TC = +25°C,
TJ = 108°C @ 6 V, 5.25 A, POUT = 38.5, PIN = 17 dBm
b) For TC = +80°C,
TJ = 159°C @ 6 V, 4.96 A, POUT = 38.1, PIN = 17 dBm
Absolute Maximum Ratings6,7
Parameter
Absolute Maximum
Input Power
+24 dBm
Drain Voltage
+6.5 V
Gate Voltage
-3 to 0 V
Junction Temperature8
+175°C
Storage Temperature
-65°C to +150°C
6. Exceeding any one or combination of these limits may cause
permanent damage to this device.
7. MACOM does not recommend sustained operation near these
survivability limits.
8. Junction Temperature directly effects device MTTF. Junction
temperature should be kept as low as possible to maximize
lifetime.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support



MA-COM MAAP-011140-DIE
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Application PCB Layout
C12
GND
Vd1
L1
R1
C1
GND
L2
C2 R2
Vd2
C8
C3 L3
R3
C4 R4
C9
C13
Rev. V2
C5
R5
C10
Vg
C15 GND
MAAP011140
R7
C7
C6
C11
L4
R6
Vd1 Vd2
GND GND
C14
Application Diagram
VD1
VD2
C13 C8
L1 L2
L3
C9 C14
R1 R2
C1 C2
R3 R4
C3 C4
VD1 VD2 VD3 VD4
RF RF
IN OUT
Application Parts List
Part
Value
Case Style
C1 - C7
0.01 µF
0402
C8 - C12
1 µF
0603
C13 - C16
10 µF
0805
R1 - R7
10 Ω
L1 - L4
(Chip Ferrite Bead)
BLM18HE601SN1D
0402
0603
VG VD3 VD4
R5
C5
C 10
R6
C6
L4
C11 C15
R7
C7
C12 C16
PCB Material Specifications
Top Layer: 1/2 oz Copper Cladding, 0.017 mm thickness
Dielectric Layer: Rogers RO4350B, 0.101 mm thickness
Bottom Layer: 1/2 oz Copper Cladding, 0.017 mm thickness
Finished overall thickness: 0.135 mm
3 VG VD1 VD2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support







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