Power Amplifier. MAAP-015035 Datasheet

MAAP-015035 Amplifier. Datasheet pdf. Equivalent

MAAP-015035 Datasheet
Recommendation MAAP-015035 Datasheet
Part MAAP-015035
Description Power Amplifier
Feature MAAP-015035; MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Features  12 W X-Band Power Amplifier  36 dB Smal.
Manufacture MA-COM
Datasheet
Download MAAP-015035 Datasheet




MA-COM MAAP-015035
MAAP-015035
Power Amplifier, 12 W
8.5 - 11.5 GHz
Features
12 W X-Band Power Amplifier
36 dB Small Signal Gain
41 dBm Saturated Pulsed Output Power
40% Power Added Efficiency
On Chip Gate Bias Circuit
100% On-wafer DC & RF Power Tested
100% Visual Inspection to MIL-STD-833
Bare Die
Description
The MAAP-015035 is a three stage 8.5 - 11.5 GHz
GaAs pHEMT MMIC power amplifier capable of
achieving a saturated pulsed output power of
41 dBm and a small signal gain of 36 dB. The gate
terminals of the power amplifier can be biased
directly using a direct gate voltage or using an on
chip gate bias circuit. The chip includes surface
passivation for added protection and reliability
This device is well suited for communication and
radar applications.
Ordering Information
Part Number
MAAP-015035-DIE
Package
Die in Vacuum release gel
pack
Functional Schematic
VG1 VB1 VD1 VG2
1 456
VB2 VB3
9 10
Bias Cct
2,7,11
VG3 VD2
12 13
Rev. V1
VD3
14
RFIN 32
16 RFOUT
Bias Cct
21,25,30
31 29 27 26
VG1 VB1 VD1 VG2
23 22
VB2 VB3
20 19
VG3 VD2
18
VD3
Pad Configuration
Pad No. Function Pad No. Function
1 VG1 17 GND
2 Bias Circuit GND 18
VD3
3
GND
19
VD2
4 VB1 20 VG3
5 VD1 21 Bias Circuit GND
6 VG2 22 VB3
7 Bias Circuit GND 23
VB2
8 GND 24 GND
9 VB2 25 Bias Circuit GND
10 VB3 26 VG2
11 Bias Circuit GND 27
VD1
12 VG3 28 VB1
13 VD2 29 GND
14 VD3 30 Bias Circuit GND
15 GND 31
VG1
16 RFOUT 32
RFIN
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298



MA-COM MAAP-015035
MAAP-015035
Power Amplifier, 12 W
8.5 - 11.5 GHz
Rev. V1
Electrical Specifications:
Freq. = 8.5 - 11.5 GHz, TA = +25°C, Duty Cycle = 5%, Pulse = 5µs, PIN = 8 dBm, VG = -0.9V
Parameter
Gain (Large Signal)
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Saturated Output Power
Units
dB
dB
dB
dB
dB
dBm
Min.
32
40
Typ.
33
36
1
12
10
41
Max.
Power Added Efficiency
8.5 - 9.0 GHz
9.0 - 10.0 GHz
10.0 - 11.5 GHz
Drain Bias Voltage
Drain Current
%
35
40
40
V 8.0
A 2.5 3 5.5
Absolute Maximum Ratings1,2
Parameter
Input Power
Drain Voltage
Gate Voltage
Bias Voltage
Drain Current
Gate Current (Direct Bias)
Gate Current
(On Chip Bias)
Operating Temperature
Junction Temperature3,4
Absolute Maximum
+12 dBm
+8.5 V
-2.0 V < VG < -0.7 V
-6.5 V < VB < -4.5 V
6A
30 mA
180 mA
-40°C to +85°C
+175°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near
these survivability limits.
3. Operating at nominal conditions with TJ ≤ +175°C will ensure
MTTF > 1 x 106 hours.
4. Junction Temperature (TJ) = TA + Өjc * (V * I)
Typical thermal resistance (Өjc) = 6.8°C/W.
a) For TA = 25°C,
TJ = 175°C @ 8 V, 2.76 A
b) For TA = 85°C,
2 TJ = 175°C @ 8 V, 1.65 A
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298



MA-COM MAAP-015035
MAAP-015035
Power Amplifier, 12 W
8.5 - 11.5 GHz
Bonding Diagram - On Chip Bias5
Rev. V1
Bonding Diagram - Direct Gate Bias5
5. Components C1 - C12 are all 100 pF chips.
MMIC Bare Die
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298







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