Photocoupler Photorelay. TLP3105 Datasheet

TLP3105 Photorelay. Datasheet pdf. Equivalent

TLP3105 Datasheet
Recommendation TLP3105 Datasheet
Part TLP3105
Description Photocoupler Photorelay
Feature TLP3105; TOSHIBA Photocoupler Photorelay TLP3105 TLP3105 Measurement Equipment FA (Factory Automation) Powe.
Manufacture Toshiba
Datasheet
Download TLP3105 Datasheet




Toshiba TLP3105
TOSHIBA Photocoupler Photorelay
TLP3105
TLP3105
Measurement Equipment
FA (Factory Automation)
Power Line Control
Security Equipment
The Toshiba TLP3105 consists of an infrared emitting diode optically
coupled to a photo-MOSFET in a SOP, which is suitable for surface-
mount assembly. The TLP3105 features high ON-state current and low
ON-state resistance, hence the TLP3105 is suitable to control a power
line.
6-pin SOP (2.54SOP6): 2.1 mm high, 2.54 mm pitch
Normally opened (form A) device
Peak OFF-state voltage: 100 V (min)
Trigger LED current: 3 mA (max)
ON-state current: 1.4 A (max) (Ta=50°C)
ON-state resistance: 0.1 Ω (typ.), 0.2 Ω (max)
Capacitance between output terminals: 1000 pF (typ.)
OFF-state current: 10 nA (max)
Isolation voltage: 1500 Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
Pin Configuration (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
11-7C1
Weight: 0.13 g (typ.)
1
6
1: Anode
2: Cathode
3: N.C.
2
5
4: Drain D1
5: Source
6: Drain D2
3
4
Schematic
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2010-06
2019-06-17



Toshiba TLP3105
Absolute Maximum Ratings (Ta = 25°C)
TLP3105
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 25°C)
Reverse voltage
LED Diode power dissipation
Diode power dissipation derating
(Ta 25°C)
Junction temperature
Off-state output terminal voltage
On-state
current
A connection
B connection
C connection
On-state A connection
Detector
current
derating
(Ta 50°C)
B connection
C connection
Pulse on-state current (t = 100ms)
Output power dissipation
Output power dissipation derating
(Ta 50°C)
Junction temperature
Storage temperature
Operating temperature
Lead soldering temperature (10 s)
Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1)
IF
ΔIF/°C
VR
PD
ΔPD /°C
Tj
VOFF
ION
ΔION/°C
IONP
PO
ΔPO / °C
Tj
Tstg
Topr
Tsol
BVS
30
0.3
5
50
-0.5
125
100
1.4
1.4
2.8
18.7
18.7
37.3
4
196
2.62
125
55 to 125
40 to 85
260
1500
mA
mA/°C
V
mW
mW/°C
°C
V
A
mA/°C
A
mW
mW / °C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ. Max
Unit
Supply voltage
Forward current
Operating temperature
VDD
100
V
IF
7.5
20
mA
Topr
-20
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-17



Toshiba TLP3105
Circuit Connections
TLP3105
1
6
2
5
3
4
LOAD
AC
or
DC
1
6
2
5
3
4
LOAD
DC
A connection
B connection
Individual Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Capacitance
OFF-state current
Symbol
VF
IR
CT
IOFF
Test Condition
IF = 10 mA
VR = 5 V
VF = 0 V, f = 1 MHz
VOFF = 100 V
Capacitance
COFF
V = 0 V, f = 1 MHz
1
6
2
5
3
4
LOAD
DC
C connection
Min
Typ. Max Unit
1.18
1.33 1.48
V
10
μA
70
pF
10
nA
1000
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Trigger LED current
Return LED current
On-state resistance
A connection
B connection
C connection
Symbol
IFT
IFC
RON
Test Condition
ION = 100 mA
IOFF = 10 μA
ION = 1.4 A, IF = 5 mA, t<1 s
ION = 1.4 A, IF = 5 mA, t<1 s
ION = 2.8 A, IF = 5 mA, t<1 s
Min
Typ. Max Unit
3
mA
0.1
mA
0.1
0.2
0.05
0.1
Ω
0.025
Isolation Characteristics (Ta = 25°C)
Characteristics
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. 60 %
AC, 60 s
Min
Typ. Max Unit
0.8
pF
5 × 1010 1014
Ω
1500
Vrms
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-17







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