POWER MOSFET. AP4530GM Datasheet

AP4530GM MOSFET. Datasheet pdf. Equivalent

AP4530GM Datasheet
Recommendation AP4530GM Datasheet
Part AP4530GM
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4530GM; Advanced Power Electronics Corp. AP4530GM RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE P.
Manufacture Advanced Power Electronics
Datasheet
Download AP4530GM Datasheet




Advanced Power Electronics AP4530GM
Advanced Power
Electronics Corp.
AP4530GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Fast Switching Performance
Lower Gate Charge
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
40 -40
±20 ±20
5.7 -4.2
4.5
20
2
-3.4
-20
0.016
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
40V
36mΩ
5.7A
-40V
68mΩ
-4.2A
D2
S2
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
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201101071



Advanced Power Electronics AP4530GM
AP4530GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=5A
VGS=4.5V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=40V, VGS=0V
VDS=32V, VGS=0V
VGS=±20V
ID=5A
VDS=30V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω,VGS=10V
RD=20Ω
VGS=0V
VDS=25V
f=1.0MHz
40 -
-V
- - 36 mΩ
- - 50 mΩ
1 - 3V
-5-S
- - 10 uA
- - 25 uA
- - ±100 nA
- 7 12 nC
- 1.2 - nC
- 3.4 - nC
- 4 - ns
- 9 - ns
- 18 - ns
- 4 - ns
- 380 610 pF
- 70 - pF
- 55 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.5A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 19 - ns
- 13 - nC
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Advanced Power Electronics AP4530GM
AP4530GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2A
-40 -
-V
- - 68 mΩ
- - 100 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=-10V, ID=-4A
VDS=-40V, VGS=0V
VDS=-32V, VGS=0V
VGS=±20V
ID=-3A
VDS=-30V
VGS=-4.5V
VDS=-20V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=20Ω
VGS=0V
VDS=-25V
f=1.0MHz
-4-S
- - -10 uA
- - -25 uA
- - ±100 nA
- 8 13 nC
- 1.6 - nC
- 4.3 - nC
- 6 - ns
- 6 - ns
- 24 - ns
- 7 - ns
- 605 970 pF
- 75 - pF
- 65 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.5A, VGS=0V
IS=-3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 21 - ns
- 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
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