POWER MOSFET. AP4531GH Datasheet

AP4531GH MOSFET. Datasheet pdf. Equivalent

AP4531GH Datasheet
Recommendation AP4531GH Datasheet
Part AP4531GH
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4531GH; Advanced Power Electronics Corp. AP4531GH RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE P.
Manufacture Advanced Power Electronics
Datasheet
Download AP4531GH Datasheet




Advanced Power Electronics AP4531GH
Advanced Power
Electronics Corp.
AP4531GH
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
Fast Switching Performance
Description
D1/D2
S1
G1
S2
G2
TO-252-4L
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
40V
32mΩ
7.4A
-40V
90m
-4.7A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
40 -40
±20 ±20
7.4 -4.7
6.1 -3.7
40 -40
3.125
0.025
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
12
40
Units
V
V
A
A
A
W
W/
Unit
/W
/W
Data and specifications subject to change without notice
201101071-1/7



Advanced Power Electronics AP4531GH
AP4531GH
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=6A
VGS=4.5V, ID=4A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=40V, VGS=0V
VDS=32V, VGS=0V
VGS=±20V
ID=6A
VDS=32V
VGS=4.5V
VDS=20V
ID=6A
RG=3.3Ω,VGS=10V
RD=3.3Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
40 -
-V
- - 32 mΩ
- - 45 mΩ
1 - 3V
-6-S
- - 10 uA
- - 25 uA
- - ±100 nA
- 6.7 14 nC
- 1.3 - nC
- 3.4 - nC
- 4.5 - ns
- 15 - ns
- 16 - ns
- 2.8 - ns
- 450 720 pF
- 70 - pF
- 50 - pF
- 1.5 2.3 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=2.4A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 19 - ns
- 12 - nC
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Advanced Power Electronics AP4531GH
AP4531GH
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=0V, ID=-250uA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-4A
VDS=-40V, VGS=0V
VDS=-32V, VGS=0V
VGS=±20V
ID=-4A
VDS=-32V
VGS=-4.5V
VDS=-20V
ID=-4A
-40 -
-
- - 90
- - 130
-1 - -3
-4-
- - -10
- - -25
- - ±100
- 6.4 10
- 1.4 -
- 3.5 -
- 6.5 -
- 13.5 -
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
- 20 -
tf Fall Time
RD=5Ω
-5-
Ciss Input Capacitance
VGS=0V
- 480 770
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 60 -
- 50 -
Units
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-2.4A, VGS=0V
IS=-4A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 22 - ns
- 17 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t 10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7







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