POWER MOSFET. AP4563GH-HF Datasheet

AP4563GH-HF MOSFET. Datasheet pdf. Equivalent

AP4563GH-HF Datasheet
Recommendation AP4563GH-HF Datasheet
Part AP4563GH-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4563GH-HF; Advanced Power Electronics Corp. AP4563GH-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE .
Manufacture Advanced Power Electronics
Datasheet
Download AP4563GH-HF Datasheet




Advanced Power Electronics AP4563GH-HF
Advanced Power
Electronics Corp.
AP4563GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
D1/D2
N-CH
Fast Switching Performance
RoHS Compliant
S1
G1 S2
G2
P-CH
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
40V
30mΩ
8A
-40V
36mΩ
-7.3A
D2
G1 G2
S1
S2
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
P-channel
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current , VGS @ 10V
Drain Current3 , VGS @ 10V
Drain Current3 , VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
40 -40
+20 +20
30 -27
8.0 -7.3
6.3 -5.9
40 -40
3.13
Linear Derating Factor
0.025
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
3.2
3
40
Units
/W
/W
/W
1
201412194AP



Advanced Power Electronics AP4563GH-HF
AP4563GH-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=8A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=8A
VDS=32V, VGS=0V
VGS=+20V, VDS=0V
ID=8A
VDS=32V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
f=1.0MHz
40 - - V
- - 30 m
- - 40 m
1 - 3V
- 18 -
S
- - 10 uA
- - +100 nA
- 13 20.8 nC
- 3 - nC
- 8 - nC
- 8 - ns
- 5.5 - ns
- 23 - ns
- 6 - ns
- 960 1760 pF
- 105 - pF
- 90 - pF
- 1.5 2.7 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=2.4A, VGS=0V
IS=8A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 20 - ns
- 14 - nC
2



Advanced Power Electronics AP4563GH-HF
AP4563GH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A
-40 -
-
- - 36
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VGS=-4.5V, ID=-5A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-7A
VDS=-32V, VGS=0V
VGS=+20V, VDS=0V
ID=-7A
VDS=-32V
VGS=-4.5V
VDS=-20V
ID=-1A
RG=3.3Ω
- - 48
-1 - -3
- 19 -
- - -10
- - +100
- 18 30
-3-
- 10 -
- 10 -
-5-
- 46 -
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
VGS=-10V
VGS=0V
VDS=-25V
- 30 -
- 1360 2500
- 155 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
.f=1.0MHz
- 140 -
- 7 13
Units
V
m
m
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-2.4A, VGS=0V
IS=-7A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 23 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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