POWER MOSFET. AP4578GH-HF Datasheet

AP4578GH-HF MOSFET. Datasheet pdf. Equivalent

AP4578GH-HF Datasheet
Recommendation AP4578GH-HF Datasheet
Part AP4578GH-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4578GH-HF; Advanced Power Electronics Corp. AP4578GH-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE .
Manufacture Advanced Power Electronics
Datasheet
Download AP4578GH-HF Datasheet





Advanced Power Electronics AP4578GH-HF
Advanced Power
Electronics Corp.
AP4578GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
Fast Switching Performance
RoHS Compliant & Halogen-Free
Description
S1 G1
S2
G2
D1/D2 N-CH
P-CH
TO-252-4L
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
G1 G2
S1
60V
72mΩ
9A
-60V
125mΩ
-6A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current3
Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
60 -60
+25 +25
9 -6
6
30
8.9
-4
-30
0.07
V
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
14
110
Units
/W
/W
1
201501164



Advanced Power Electronics AP4578GH-HF
AP4578GH-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=3A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=48V, VGS=0V
Gate-Source Leakage
VGS=+25V, VDS=0V
Total Gate Charge
ID=5A
Gate-Source Charge
VDS=48V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=30V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3
Fall Time
VGS=10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 - - V
- 0.05 - V/
- - 72 mΩ
- - 90 mΩ
1 - 3V
-8-S
- - 10 uA
- - 250 uA
- - +100 nA
- 9 15 nC
- 2 - nC
- 5 - nC
- 7 - ns
- 5 - ns
- 21 - ns
- 5 - ns
- 750 1200 pF
- 80 - pF
- 60 - pF
- 1.5 2.3 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 33 - ns
- 55 - nC
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Advanced Power Electronics AP4578GH-HF
AP4578GH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/Tj
RDS(ON)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
Reference to 25,ID=-1mA
VGS=-10V, ID=-3A
-60 -
-V
- -0.04 - V/
- - 125 mΩ
VGS=-4.5V, ID=-2A
- - 150 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=-48V, VGS=0V
IGSS Gate-Source Leakage
VGS=+25V, VDS=0V
- 5 -S
- - -10 uA
- - -250 uA
- - +100 nA
Qg Total Gate Charge
ID=-3A
Qgs Gate-Source Charge
VDS=-48V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time
VDS=-30V
tr Rise Time
ID=-1A
- 13 21 nC
- 3 - nC
- 6 - nC
- 11 - ns
- 5 - ns
td(off)
Turn-off Delay Time
RG=3.3,VGS=-10V
- 35 - ns
tf Fall Time
RD=30
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 7 - ns
- 1030 1650 pF
- 90 - pF
- 75 - pF
Rg Gate Resistance
f=1.0MHz
- 5 7.5 Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-3A, VGS=0V
IS=-3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 42 - ns
- 82 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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