POWER MOSFET. AP4578GH Datasheet

AP4578GH MOSFET. Datasheet pdf. Equivalent

AP4578GH Datasheet
Recommendation AP4578GH Datasheet
Part AP4578GH
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4578GH; Advanced Power Electronics Corp. AP4578GH RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE P.
Manufacture Advanced Power Electronics
Datasheet
Download AP4578GH Datasheet




Advanced Power Electronics AP4578GH
Advanced Power
Electronics Corp.
AP4578GH
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
D1/D2
Fast Switching Performance
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
60V
72m
9A
-60V
125m
-6A
D2
G1 G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
60 -60
+25 +25
9 -6
6 -4
30 -30
8.9
0.07
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case3
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
14
110
Units
/W
/W
1
201108113



Advanced Power Electronics AP4578GH
AP4578GH
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=3A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=48V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+25V, VDS=0V
ID=5A
Gate-Source Charge
VDS=48V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=30V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 -
-V
- 0.05 - V/
- - 72 m
- - 90 m
1 - 3V
-8-S
- - 10 uA
- - 250 uA
- - +100 nA
- 9 15 nC
- 2 - nC
- 5 - nC
- 7 - ns
- 5 - ns
- 21 - ns
- 5 - ns
- 750 1200 pF
- 80 - pF
- 60 - pF
- 1.5 2.3
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 33 - ns
- 55 - nC
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Advanced Power Electronics AP4578GH
AP4578GH
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-60 -
-
BVDSS/Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-3A
- -0.04 -
- - 125
VGS=-4.5V, ID=-2A
- - 150
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3
gfs
Forward Transconductance
VDS=-10V, ID=-3A
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=-48V, VGS=0V
IGSS Gate-Source Leakage
VGS=+25V, VDS=0V
Qg Total Gate Charge2
ID=-3A
-5-
- - -10
- - -250
- - +100
- 13 21
Qgs Gate-Source Charge
VDS=-48V
-3-
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-30V
-6-
- 11 -
tr Rise Time
ID=-1A
-5-
td(off)
Turn-off Delay Time
RG=3.3,VGS=-10V
- 35 -
tf Fall Time
RD=30
-7-
Ciss Input Capacitance
VGS=0V
- 1030 1650
Coss Output Capacitance
VDS=-25V
- 90 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 75 -
Rg Gate Resistance
f=1.0MHz
- 5 7.5
Units
V
V/
m
m
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-3A, VGS=0V
IS=-3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 42 - ns
- 82 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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