POWER MOSFET. AP4578GM-HF Datasheet

AP4578GM-HF MOSFET. Datasheet pdf. Equivalent

AP4578GM-HF Datasheet
Recommendation AP4578GM-HF Datasheet
Part AP4578GM-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4578GM-HF; Advanced Power Electronics Corp. AP4578GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE .
Manufacture Advanced Power Electronics
Datasheet
Download AP4578GM-HF Datasheet





Advanced Power Electronics AP4578GM-HF
Advanced Power
Electronics Corp.
AP4578GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Performance
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
SO-8
G2
S2
S1 G1
Description
AP4578 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
60V
64mΩ
4.5A
-60V
125mΩ
-3A
D2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G1
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
60 -60
±20 ±20
4.5 -3
3.6 -2.4
20 -20
2.0
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Unit
/W
Data and specifications subject to change without notice
1
201501092



Advanced Power Electronics AP4578GM-HF
AP4578GM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=4A
VGS=4.5V, ID=2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=4A
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDS=60V, VGS=0V
VDS=48V, VGS=0V
VGS=±20V
ID=4A
VDS=48V
VGS=4.5V
VDS=30V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
RD=30Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 - - V
- 0.05 - V/
- 55 64 mΩ
- 65 80 mΩ
1 - 3V
-7-S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 17 nC
- 3 - nC
- 4 - nC
- 9 - ns
- 5 - ns
- 22 - ns
- 7 - ns
- 730 1170 pF
- 80 - pF
- 60 - pF
- 1.8 2.7 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=4A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 28 - ns
- 39 - nC
2



Advanced Power Electronics AP4578GM-HF
AP4578GM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60 -
-
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-3A
- -0.04 -
- 100 125
VGS=-4.5V, ID=-2A
- 120 150
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3
gfs
Forward Transconductance
VDS=-10V, ID=-2A
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
VDS=-48V, VGS=0V
IGSS Gate-Source Leakage
VGS=±20V
Qg Total Gate Charge2
ID=-3A
-5-
- - -1
- - -25
- - ±100
- 12 20
Qgs Gate-Source Charge
VDS=-48V
-2-
Qgd
td(on)
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-30V
-6-
- 10 -
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
ID=-1A
RG=3.3Ω,VGS=-10V
RD=30Ω
-6-
- 33 -
-6-
Ciss Input Capacitance
VGS=0V
- 905 1450
Coss Output Capacitance
VDS=-25V
- 90 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 75 -
Rg Gate Resistance
f=1.0MHz
- 12 18
Units
V
V/
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 36 - ns
- 55 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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