BARRIER DIODE. 1SS413 Datasheet

1SS413 DIODE. Datasheet pdf. Equivalent

1SS413 Datasheet
Recommendation 1SS413 Datasheet
Part 1SS413
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Feature 1SS413; 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 .
Manufacture SEMTECH
Datasheet
Download 1SS413 Datasheet





SEMTECH 1SS413
1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
Q
Top View
Marking Code: "Q"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IO
IFSM
Ptot
TJ
Ts
Value
25
20
100
50
1
100
125
- 55 to + 125
Unit
V
V
mA
mA
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 50 mA
Reverse Current
at VR = 20 V
Total Capacitance
at VR = 0 V, f = 1 MHz
Symbol
VF
IR
CT
Typ.
-
-
3.9
Max.
0.55
0.5
-
Unit
V
µA
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006



SEMTECH 1SS413
1SS413
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
ALL ROUND
HE
D
A
SOD-523
UNIT A b p C D E HE V
mm
0.70
0.60
0.4 0.135 1.25 0.85
0.3 0.127 1.15 0.75
1.7
1.5
0.1
5O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006





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