Silicon Diode. 1SS427 Datasheet

1SS427 Diode. Datasheet pdf. Equivalent

1SS427 Datasheet
Recommendation 1SS427 Datasheet
Part 1SS427
Description Silicon Diode
Feature 1SS427; Switching Diodes Silicon Epitaxial Planar 1SS427 1. Applications • Ultra-High-Speed Switching 2. Pac.
Manufacture Toshiba
Datasheet
Download 1SS427 Datasheet





Toshiba 1SS427
Switching Diodes Silicon Epitaxial Planar
1SS427
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal Circuit
SOD-923
fSC
1SS427
1: Cathode
2: Anode
1: Cathode
2: Anode
Start of commercial production
2005-12
1 2014-07-08
Rev.3.0



Toshiba 1SS427
1SS427
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR 80
Peak forward current
IFM 200 mA
Average rectified current
IO 100
Power dissipation
PD (Note 1)
150
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA
See Fig. 5.1.
Min Typ. Max Unit
0.62
V
0.75
0.98 1.20
  0.1 µA
  0.5
0.3 pF
1.6 ns
Fig. 4.1 Reverse recovery time (trr) Test circuit
2 2014-07-08
Rev.3.0



Toshiba 1SS427
5. Marking
Fig. 5.1 Marking
6. Land Pattern Dimensions (for reference only)
1SS427
Fig. 6.1 SOD-923 (Unit: mm)
Fig. 6.2 fSC (Unit: mm)
3 2014-07-08
Rev.3.0





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