Silicon Diode. 1SS420 Datasheet

1SS420 Diode. Datasheet pdf. Equivalent

1SS420 Datasheet
Recommendation 1SS420 Datasheet
Part 1SS420
Description Silicon Diode
Feature 1SS420; TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low.
Manufacture Toshiba
Datasheet
Download 1SS420 Datasheet




Toshiba 1SS420
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
Low reverse current: IR = 5 µA (max)
1SS420
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
35
Reverse voltage
VR 30
Maximum (peak) forward current IFM 300
Average forward current
IO 200
Surge current (10 ms)
IFSM
1
Power dissipation
P * 150
Junction temperature
Tj 125
Storage temperature range
Tstg 55~125
Operating temperature range
Topr 40~100
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Unit
V
V
mA
mA
A
mW
°C
°C
°C
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1 mA
IF = 10 mA
IF = 200 mA
VR = 30 V
VR = 0, f = 1 MHz
Equivalent Circuit (Top View)
Marking
Min Typ. Max Unit
0.29
0.36
0.52 0.6
――
5
20
V
µA
pF
S6
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Toshiba 1SS420
1SS420
10010
IF - VF
10100m0
101m0
1m1
Ta = 100°C
25
100u0
10u0
-25
1u0
0
0.2 0.4 0.6
FORWARD VOLTAGE VF (V)
0.8
10100u0
101u0
1u1
100n0
10n0
1n0
100p0
10p0
0
IR - VR
Ta = 100°C
25
-25
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
CT - VR
100
Ta = 25°C
f = 1MHz
10
1
0 10 20 30
REVERSE VOLTAGE VR (V)
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Toshiba 1SS420
1SS420
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and
sold, under any law and regulations.
3 2005-03-23





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