DatasheetsPDF.com

N-Channel MOSFET. SSF5NS50U Datasheet

DatasheetsPDF.com

N-Channel MOSFET. SSF5NS50U Datasheet






SSF5NS50U MOSFET. Datasheet pdf. Equivalent




SSF5NS50U MOSFET. Datasheet pdf. Equivalent





Part

SSF5NS50U

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) ID 500V 0.55Ω (typ.) 5A ① Feat ures and Benefits:  High dv/dt and a valanche capabilities  100% avalanch e tested  Low input capacitance and gate charge  Low gate input resistan ce TO-220 SSF5NS50U Marking and pin Assignment Schematic diagram Descript ion: The SSF5NS50U series MOSFETs is a new technology, which combine.
Manufacture

SILIKRON

Datasheet
Download SSF5NS50U Datasheet


SILIKRON SSF5NS50U

SSF5NS50U; s an innovative super junction technolog y and advance process. This new technol ogy achieves low Rdson, energy saving, high reliability and uniformity, superi or power density and space saving. Abs olute max Rating: Symbol ID @ TC = 25 C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Cont inuous Drain Current, VGS @ 10V Continu ous Drain Current, VG.


SILIKRON SSF5NS50U

S @ 10V Pulsed Drain Current ② Power D issipation ③ Linear Derating Factor D rain-Source Voltage Gate-to-Source Volt age Single Pulse Avalanche Energy @ L=3 8.6mH Avalanche Current @ L=38.6mH Oper ating Junction and Storage Temperature Range Max. 5① 3.2 ① 15 62 0.5 500 ± 30 111 2.4 -55 to +150 Units A W W/ °C V V mJ A °C ©Silikron Semiconduc tor CO.,LTD. 2013.06.20 www.s.


SILIKRON SSF5NS50U

ilikron.com Version : 1.0 page 1 of 8 SSF5NS50U Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to- case ③ Junction-to-ambient (t ≤ 10s ) ④ Typ. — — Max. 2.0 62 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified S ymbol V(BR)DSS RDS(on) VGS(th) IDSS IGS S Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source.

Part

SSF5NS50U

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) ID 500V 0.55Ω (typ.) 5A ① Feat ures and Benefits:  High dv/dt and a valanche capabilities  100% avalanch e tested  Low input capacitance and gate charge  Low gate input resistan ce TO-220 SSF5NS50U Marking and pin Assignment Schematic diagram Descript ion: The SSF5NS50U series MOSFETs is a new technology, which combine.
Manufacture

SILIKRON

Datasheet
Download SSF5NS50U Datasheet




 SSF5NS50U
Main Product Characteristics:
VDSS
RDS(on)
ID
500V
0.55Ω (typ.)
5A
Features and Benefits:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
TO-220
SSF5NS50U
Marking and pin
Assignment
Schematic diagram
Description:
The SSF5NS50U series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=38.6mH
Avalanche Current @ L=38.6mH
Operating Junction and Storage Temperature Range
Max.
5
3.2
15
62
0.5
500
± 30
111
2.4
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.06.20
www.silikron.com
Version : 1.0
page 1 of 8




 SSF5NS50U
SSF5NS50U
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
2.0
62
Units
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
500
2
Typ.
0.55
1.16
0.58
1.26
2.4
15
1.8
8.1
8.7
5.4
22
10
332
21
3.5
Max.
0.65
0.75
4
1
50
100
-100
Units
V
Ω
Ω
V
μA
nA
nC
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VGS=10V,ID = 2.8A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 500V,VGS = 0V
TJ = 125°C
VGS = 30V
VGS = -30V
ID = 2.3A,
VDS=400V,
VGS = 10V
VGS=10V, VDS =400V,
ns
RGEN=5.3Ω,ID =2.
VGS = 0V
pF VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
5
— — 15
0.83 1.2
130
706
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V
TJ = 25°C, IF =2.3A,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.06.20
www.silikron.com
Version : 1.0
page 2 of 8




 SSF5NS50U
Test circuits and Waveforms
EAS Test Circuit:
SSF5NS50U
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.06.20
www.silikron.com
Version : 1.0
page 3 of 8



Recommended third-party SSF5NS50U Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)