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Bridge Rectifier. MURF1640DR Datasheet

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Bridge Rectifier. MURF1640DR Datasheet






MURF1640DR Rectifier. Datasheet pdf. Equivalent




MURF1640DR Rectifier. Datasheet pdf. Equivalent





Part

MURF1640DR

Description

16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier



Feature


MURF1620DR thru MURF1660DR ® MURF1620 DR thru MURF1660DR Pb Free Plating Prod uct Pb 16.0 Ampere Reverse Doubler Po larity Ultra Fast Recovery Half Bridge Rectifier Features Fast switching for high efficiency Low forward voltage dro p High current capability Low reverse l eakage current High surge current capab ility Application Automotive Inverters and Solar Inverters.
Manufacture

Thinki Semiconductor

Datasheet
Download MURF1640DR Datasheet


Thinki Semiconductor MURF1640DR

MURF1640DR; Plating Power Supply,SMPS and UPS Car A udio Amplifiers and Sound Device System s ITO-220AB Unit : inch (mm) Mechani cal Data Case: Fully isolated TO-220FP FullPak Plastic Epoxy: UL 94V-0 rate fl ame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As ma rked on diode body Mounting position: A ny Weight: 2.1 gram approxiamtely Case Case Case Case.


Thinki Semiconductor MURF1640DR

Positive Negative Doubler Reverse D oubler Common Cathode Common Anode Tan dem Polarity Tandem Polarity Suffix "C " Suffix "A" Suffix "D" Suffix "DR" MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS Rating at 25oC ambient tempera ture unless otherwise specified. Single phase, half wave, 60Hz, resistive or i nductive load. For capacitive load, der ate current by 20%.


Thinki Semiconductor MURF1640DR

. SYMBOL MURF1620DR MURF1640DR MURF1660 DR UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forwa rd Rectified Current TC=100oC VRRM VRM S VDC IF(AV) 200 140 200 400 280 400 16.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 175 1 50 Maximum Instan.

Part

MURF1640DR

Description

16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier



Feature


MURF1620DR thru MURF1660DR ® MURF1620 DR thru MURF1660DR Pb Free Plating Prod uct Pb 16.0 Ampere Reverse Doubler Po larity Ultra Fast Recovery Half Bridge Rectifier Features Fast switching for high efficiency Low forward voltage dro p High current capability Low reverse l eakage current High surge current capab ility Application Automotive Inverters and Solar Inverters.
Manufacture

Thinki Semiconductor

Datasheet
Download MURF1640DR Datasheet




 MURF1640DR
MURF1620DR thru MURF1660DR
®
MURF1620DR thru MURF1660DR
Pb Free Plating Product
Pb
16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit : inch (mm)
Mechanical Data
Case: Fully isolated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
Case
Case
Case
Case
Positive
Negative
Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C"
Suffix "A"
Suffix "D"
Suffix "DR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MURF1620DR MURF1640DR MURF1660DR UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
200
140
200
400
280
400
16.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98
1.3
5.0
250
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
600 V
420 V
600 V
A
A
1.7 V
uA
uA
nS
pF
oCW
oC
Rev.05
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/




 MURF1640DR
MURF1620DR thru MURF1660DR
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
MURF1620DR
MURF1640DR
8.0
MURF1660DR
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200
175
150
125
100
75
50
25
0
1
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/







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