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MOS FET. FK3306010L Datasheet |
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DReovcisNioon. . T2 T4-EA-12592
FK3306010L
Silicon N-channel MOSFET
For switching
FK350601 in SSSMini3 type package
Features
Low drive voltage : 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol : CV
Packaging
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25C
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Drain current
ID
Pulse drain current
IDp
Total power dissipation
PD
Channel temperature
Tch
Operating Ambient Temperature
Tstg
Storage temperature
Tstg
Rating
60
12
100
200
100
150
-40 to + 85
-55 to +150
Unit
V
V
mA
mA
mW
C
C
C
Product Standards
MOS FET
FK3306010L
1.2
0.3
3
Unit : mm
0.13
1
(0.4) (0.4)
0.8
2
0.2
0.52
1. Gate
2. Source
3. Drain
Panasonic
JEITA
Code
SSSMini3-F2-B
SC-105AA
SOT-723
Internal Connection
(D)
3
12
(G) (S)
Pin Name
1. Gate
2. Source
3. Drain
Established : 2010-05-20
Revised : 2013-08-08
Page 1 of 5
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DReovcisNioon. . T2 T4-EA-12592
Product Standards
MOS FET
FK3306010L
Electrical Characteristics Ta = 25C 3C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source breakdown voltage
VDSS ID = 1 mA, VGS = 0
60
V
Drain-source cutoff current
IDSS VDS = 60 V, VGS = 0
1.0 A
Gate-source cutoff current
IGSS VGS = 10 V, VDS = 0
10 A
Gate threshold voltage
VTH ID = 1.0 A, VDS = 3.0 V
0.9 1.2 1.5
V
Drain-source ON resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 10 mA, VGS = 4.0 V
8 15
6 12
Forward transfer admittance
|Yfs| ID = 10 mA, VDS = 3 V, f = 1 kHz 20 60
mS
Input capacitance
Ciss
12 pF
Output capacitance
Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF
Reverse transfer capacitance
Crss
3 pF
Turn-on time *1
ton
VDD = 3 V, VGS = 0 to 3 V,
RL = 300
100 ns
Turn-off time *1
toff
VDD = 3 V, VGS = 3 to 0 V,
RL = 300
100 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Turn-on and Turn-off test circuit
V GS
V out
10%
90%
10%
90%
VDD=3V
ID=10mA
RL=300Ω
Vin
VGS=0～3V
50Ω
G
D
S
Vout
ton toff
Established : 2010-05-20
Revised : 2013-08-08
Page 2 of 5
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DReovcisNioon. . T2 T4-EA-12592
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID - VDS
VGS = 4.0 V
2.5 V
2.0 V
1.5 V
0.1 0.2 0.3 0.4 0.5
Drain-source Voltage VDS (V)
0.6
0.3
0.25
0.2
0.15
0.1
0.05
0
0
VDS - VGS
5 mA
ID = 20 mA
10 mA
24
Gate-source Voltage VGS (V)
6
Capiacitance - VDS
100
10
1
0.1
Ciss
Coss
Crss
1
Drain-source Voltage VDS (V)
10
Established : 2010-05-20
Revised : 2013-08-08
0.004
0.003
Product Standards
MOS FET
FK3306010L
ID - VGS
Ta = 85 ℃
0.002
0.001
25 ℃
-40 ℃
0
0
10
12
Gate-source voltage VGS (V)
RDS(on) - ID
2.5 V
3
VGS = 4.0 V
1
0.001
0.01
Drain Current ID (A)
0.1
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