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TMAN10N80

TRinno

N-channel MOSFET

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TMAN10N80 VDSS = 880 V @Tjmax ID = 10A RDS(on) = 1.05 W(max) @ VGS= 10 V D G Device TMAN10N80 Package TO-3P Marking TMAN10N80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse...


TRinno

TMAN10N80

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