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TMD3N50AZG Datasheet, Equivalent, N-channel MOSFET.

N-channel MOSFET

N-channel MOSFET

 

 

 

Part TMD3N50AZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification  Improved ESD performance D-PAK TMD3N50 AZ(G)/TMU3N50AZ(G) BVDSS 500V N-chann el MOSFET ID RDS(on) 2.
5A < 2.
8W I- PAK Device TMD3N50AZ / TMU3N50AZ TMD3N 50AZG / TMU3N50AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanc he Energy (Note 2) Repetitive Avalanch e Current (Note 1) Repetitive A .
Manufacture TRinno
Datasheet
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Part TMD3N50AZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification  Improved ESD performance D-PAK TMD3N50 AZ(G)/TMU3N50AZ(G) BVDSS 500V N-chann el MOSFET ID RDS(on) 2.
5A < 2.
8W I- PAK Device TMD3N50AZ / TMU3N50AZ TMD3N 50AZG / TMU3N50AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanc he Energy (Note 2) Repetitive Avalanch e Current (Note 1) Repetitive A .
Manufacture TRinno
Datasheet
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TMD3N50AZG

TMD3N50AZG
TMD3N50AZG

TMD3N50AZG

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