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TMU3N50AZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMU3N50AZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification Improved ESD performance
D-PAK
TMD3N50 AZ(G)/TMU3N50AZ(G)
BVDSS 500V
N-chann el MOSFET
ID RDS(on)
2. 5A < 2. 8W I- PAK Device TMD3N50AZ / TMU3N50AZ TMD3N 50AZG / TMU3N50AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanc he Energy (Note 2) Repetitive Avalanch e Current (Note 1) Repetitive A . |
| Manufacture | TRinno |
| Datasheet |
| Part | TMU3N50AZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification Improved ESD performance
D-PAK
TMD3N50 AZ(G)/TMU3N50AZ(G)
BVDSS 500V
N-chann el MOSFET
ID RDS(on)
2. 5A < 2. 8W I- PAK Device TMD3N50AZ / TMU3N50AZ TMD3N 50AZG / TMU3N50AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanc he Energy (Note 2) Repetitive Avalanch e Current (Note 1) Repetitive A . |
| Manufacture | TRinno |
| Datasheet |
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