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TMT3N30G

TRinno

N-channel MOSFET

Description
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D Device TMT3N30G Package SOT223 TMT3N30G VDSS = 330V @Tjmax ID = 3A RDS(on) = 2.15 W(max) @ VGS= 10 V RDS(on) = 1.73 W(typ) @ VGS= 10 V S D G Marking TMT3N30G D G S Absolute Maximum Ratings Parameter Drain-Sour...


TRinno

TMT3N30G

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