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TMT3N30G Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
　
　
　
| Part | TMT3N30G |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification
D
D evice TMT3N30G
Package SOT223
TMT3N30 G
VDSS = 330V @Tjmax ID = 3A RDS(on) = 2. 15 W(max) @ VGS= 10 V RDS(on) = 1. 73 W(typ) @ VGS= 10 V S D G Marking TMT3N 30G D G S Absolute Maximum Ratings P arameter Drain-Source Voltage Gate-So urce Voltage Continuous Drain Current P ulsed Drain Current (Note 1) TC = 25 â „ƒ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipat . |
| Manufacture | TRinno |
| Datasheet |
| Part | TMT3N30G |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification
D
D evice TMT3N30G
Package SOT223
TMT3N30 G
VDSS = 330V @Tjmax ID = 3A RDS(on) = 2. 15 W(max) @ VGS= 10 V RDS(on) = 1. 73 W(typ) @ VGS= 10 V S D G Marking TMT3N 30G D G S Absolute Maximum Ratings P arameter Drain-Source Voltage Gate-So urce Voltage Continuous Drain Current P ulsed Drain Current (Note 1) TC = 25 â „ƒ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipat . |
| Manufacture | TRinno |
| Datasheet |
　
　
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