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TGAN30N135FD1 Data Sheet

Field Stop Trench IGBT

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TGAN30N135FD1
Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN30N135FD1 Field Stop Trench IGBT E GC Device TGAN30N135FD1 Package TO-3PN Marking TGAN30N135FD1 Absolute Maximum Ratings Parameter Symbol Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds VCES VGES Ic ICM IF PD TJ TSTG TL Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Value 1350 ±20 60 30 90 30 329 132 -55 ~ 150 -55 ~ 150 300 Thermal Characteristics Parameter Maximum Thermal resistance, J.
TGAN30N135FD1

Download TGAN30N135FD1 Datasheet
Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN30N135FD1 Field Stop Trench IGBT E GC Device TGAN30N135FD1 Package TO-3PN Marking TGAN30N135FD1 Absolute Maximum Ratings Parameter Symbol Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds VCES VGES Ic ICM IF PD TJ TSTG TL Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Value 1350 ±20 60 30 90 30 329 132 -55 ~ 150 -55 ~ 150 300 Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.38 2.1 40 Feb. 2014 : rev 0.0 www.trinnotech.com Remark RoHS Unit V V A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGAN30N135FD1 Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Em.


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