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2SB1261-K Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part 2SB1261-K
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistors DESCR IPTION ·Low Collector Saturation Volta ge ·High Power Dissipation- : PC= 10W( Max)@TC=25℃ ·Complement to Type 2SD1 899-K ·Minimum Lot-to-Lot variations f or robust device performance and reliab le operation APPLICATIONS ·Designed fo r use in audio amplifier and switching, especially in hybrid integrated circui ts.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Coll ector Current-Continuous PC Collector Power Dissipation @TC= .
Manufacture Inchange Semiconductor
Datasheet
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Part 2SB1261-K
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistors DESCR IPTION ·Low Collector Saturation Volta ge ·High Power Dissipation- : PC= 10W( Max)@TC=25℃ ·Complement to Type 2SD1 899-K ·Minimum Lot-to-Lot variations f or robust device performance and reliab le operation APPLICATIONS ·Designed fo r use in audio amplifier and switching, especially in hybrid integrated circui ts.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Coll ector Current-Continuous PC Collector Power Dissipation @TC= .
Manufacture Inchange Semiconductor
Datasheet
Download 2SB1261-K Datasheet

2SB1261-K

2SB1261-K
2SB1261-K

2SB1261-K

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