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2SB881 Datasheet, Equivalent, Power Transistor.Silicon PNP Power Transistor Silicon PNP Power Transistor |
| Part | 2SB881 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transis tor
DESCRIPTION ·High DC Current Gain -
: hFE = 2000(Min)@ IC= -3. 5A ·Wide A rea of Safe Operation ·Low Collector-E mitter Saturation Voltage- : VCE(sat) = -1. 5V(Max)@ IC= -3. 5A ·Complement to Type 2SD1191 ·Minimum Lot-to-Lot varia tions for robust device performance and reliable operation APPLICATIONS ·Des igned for motor drivers, printer hammer drivers, relay drivers, voltage regula tors applications. ABSOLUTE MAXIMUM RA TINGS (Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Volta ge -60 V VEBO Emit . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SB881 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transis tor
DESCRIPTION ·High DC Current Gain -
: hFE = 2000(Min)@ IC= -3. 5A ·Wide A rea of Safe Operation ·Low Collector-E mitter Saturation Voltage- : VCE(sat) = -1. 5V(Max)@ IC= -3. 5A ·Complement to Type 2SD1191 ·Minimum Lot-to-Lot varia tions for robust device performance and reliable operation APPLICATIONS ·Des igned for motor drivers, printer hammer drivers, relay drivers, voltage regula tors applications. ABSOLUTE MAXIMUM RA TINGS (Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Volta ge -60 V VEBO Emit . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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