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3DD325
Silicon NPN Power Transistor
Description
INCHANGE Semiconductor isc Silicon
NPN
Power
Transistor
isc Product Specification 3DD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE...
Inchange Semiconductor
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