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3DD325 Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
| Part | 3DD325 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | INCHANGE Semiconductor
isc Silicon NPN P ower Transistor
isc Product Specificat ion
3DD325
DESCRIPTION ·Collector-Emi tter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturatio n Voltage-
: VCE(sat)= 0. 5V(Max) @IC= 0 . 5A APPLICATIONS ·Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR AMETER VALUE UNIT VCBO VCEO VEBO Col lector-Base Voltage 3DD325A Collector-E mitter Voltage 3DD325B Emitter-Base Vol tage 50 30 50 4 V V V IC Collector C urrent-Continuous Collector Power Dissi pation @ Ta=25℃ PC Collector Power Di ssipation @ TC=25℃ TJ . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 3DD325 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | INCHANGE Semiconductor
isc Silicon NPN P ower Transistor
isc Product Specificat ion
3DD325
DESCRIPTION ·Collector-Emi tter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturatio n Voltage-
: VCE(sat)= 0. 5V(Max) @IC= 0 . 5A APPLICATIONS ·Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR AMETER VALUE UNIT VCBO VCEO VEBO Col lector-Base Voltage 3DD325A Collector-E mitter Voltage 3DD325B Emitter-Base Vol tage 50 30 50 4 V V V IC Collector C urrent-Continuous Collector Power Dissi pation @ Ta=25℃ PC Collector Power Di ssipation @ TC=25℃ TJ . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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