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MTN9N60BE3 Datasheet, Equivalent, Power MOSFET.N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET |
| Part | MTN9N60BE3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | CYStech Electronics Corp. Spec. No. : C 125E3 Issued Date : 2016. 03. 21 Revised Date : Page No. : 1/10 N-Channel Enhan cement Mode Power MOSFET MTN9N60BE3 BVD SS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=4. 5A 600V 8. 5A 0. 79Ω Des cription The MTN9N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of f ast switching, ruggedized device design , low on-resistance and cost effectiven ess. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resis tance • Simple Drive Requirement • Low Gate Charge • Fast . |
| Manufacture | CYStech Electronics |
| Datasheet |
| Part | MTN9N60BE3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | CYStech Electronics Corp. Spec. No. : C 125E3 Issued Date : 2016. 03. 21 Revised Date : Page No. : 1/10 N-Channel Enhan cement Mode Power MOSFET MTN9N60BE3 BVD SS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=4. 5A 600V 8. 5A 0. 79Ω Des cription The MTN9N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of f ast switching, ruggedized device design , low on-resistance and cost effectiven ess. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resis tance • Simple Drive Requirement • Low Gate Charge • Fast . |
| Manufacture | CYStech Electronics |
| Datasheet |
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