DatasheetsPDF.com



Part Number KU3600N10W
Manufacturers KEC
Logo KEC
Description N-Channel MOSFET
Datasheet KU3600N10W DatasheetKU3600N10W Datasheet (PDF)

  KU3600N10W   KU3600N10W
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES VDSS(Min.)= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 100 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TA=25 Derate above25 ID IDP EAS EAR dv/dt PD 1.7* 1.0* 6.4* 12.4 0.1 4.5 2.0* 0.016 Maximum Junction Temperature Tj 150 Storage Temperature Range Thermal Characteristics Tstg -55 150 Thermal Resistance, Junction-toAmbient RthJA 62.5* * : Surface Mounted on FR4 Board (50mm 50mm, 1.0t) UNIT V V A mJ mJ V/ns.



KU3600N10D KU3600N10W KF16N25D


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)