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KU3600N10W Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part KU3600N10W
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General De scription This Trench MOSFET has bette r characteristics, such as fast switchi ng time, low on resistance, low gate ch arge and excellent avalanche characteri stics.
It is mainly suitable for LED Li ghting and DC/DC Converters.
FEATURES VDSS(Min.
)= 100V, ID= 1.
7A Drain-Source ON Resistance : RDS(ON)=0.
36 Qg(typ.
) =4.
2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATIN G Drain-Source Voltage VDSS 100 Gat e-Source Voltage VGSS 20 @TC=25 Dra in Current @TC=100 Pulsed (Note1) Sin gle Pulsed Avalanche Energy (Note 2) Re petitive Avala .
Manufacture KEC
Datasheet
Download KU3600N10W Datasheet
Part KU3600N10W
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General De scription This Trench MOSFET has bette r characteristics, such as fast switchi ng time, low on resistance, low gate ch arge and excellent avalanche characteri stics.
It is mainly suitable for LED Li ghting and DC/DC Converters.
FEATURES VDSS(Min.
)= 100V, ID= 1.
7A Drain-Source ON Resistance : RDS(ON)=0.
36 Qg(typ.
) =4.
2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATIN G Drain-Source Voltage VDSS 100 Gat e-Source Voltage VGSS 20 @TC=25 Dra in Current @TC=100 Pulsed (Note1) Sin gle Pulsed Avalanche Energy (Note 2) Re petitive Avala .
Manufacture KEC
Datasheet
Download KU3600N10W Datasheet

KU3600N10W

KU3600N10W
KU3600N10W

KU3600N10W

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