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KPS8N60F Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | KPS8N60F |
|---|---|
| Description | N-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
KPS8N60F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
G eneral Description
This Super Junction MOSFET has better characteristics, suc h as fast switching time, low on resist ance, low gate charge and excellent ava lanche characteristics. It is mainly su itable for active power factor correcti on and switching mode power supplies. F EATURES VDSS=600V, ID=8A Drain-Source O N Resistance : RDS(ON)(Max)=0. 58 @VGS=1 0V Qg(typ. )= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Dra in-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Curren t @TC=100 Pul . |
| Manufacture | KEC |
| Datasheet |
| Part | KPS8N60F |
|---|---|
| Description | N-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
KPS8N60F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
G eneral Description
This Super Junction MOSFET has better characteristics, suc h as fast switching time, low on resist ance, low gate charge and excellent ava lanche characteristics. It is mainly su itable for active power factor correcti on and switching mode power supplies. F EATURES VDSS=600V, ID=8A Drain-Source O N Resistance : RDS(ON)(Max)=0. 58 @VGS=1 0V Qg(typ. )= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Dra in-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Curren t @TC=100 Pul . |
| Manufacture | KEC |
| Datasheet |
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