NPN TRANSISTOR. 2N3904 Datasheet

2N3904 TRANSISTOR. Datasheet pdf. Equivalent

2N3904 Datasheet
Recommendation 2N3904 Datasheet
Part 2N3904
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature 2N3904; SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3904 EPITAXIAL P.
Manufacture KEC
Datasheet
Download 2N3904 Datasheet




KEC 2N3904
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
*PC
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW(@Ta=25 )
1.5W(@Tc=25 )
Fe Lead-Frame : 400mW(@Ta=25 )
1.0W(@Tc=25 )
Tj
Tstg
RATING
60
40
6
200
50
625
400
1.5
1.0
150
-55 150
UNIT
V
V
V
mA
mA
mW
W
2013. 7. 08
Revision No : 2
1/4



KEC 2N3904
2N3904
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
*
ICEX
IBL
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
hie
hre
hfe
hoe
NF
VCE=30V, VEB=3V
VCE=30V, VEB=3V
IC=10 A, IE=0
IC=1mA, IB=0
IE=10 A, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
VCE=10V, IC=1mA, f=1kHz
VCE=5V, IC=0.1mA Rg=1k ,
f=10Hz 15.7kHz
Delay Time
td
Switching Time
Rise Time
Storage Time
tr
tstg
Fall Time
tf
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
MIN.
-
-
60
40
6.0
40
70
100
60
30
-
-
0.65
-
300
-
-
1.0
0.5
100
1.0
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
50
-
-
-
-
-
300
-
-
0.2
0.3
0.85
0.95
-
4.0
8.0
10
8.0
400
40
UNIT
nA
nA
V
V
V
V
V
MHz
pF
pF
k
x10-4
- - 5.0 dB
- - 35
- - 35
nS
- - 200
- - 50
2013. 7. 08
Revision No : 2
2/4



KEC 2N3904
2N3904
2013. 7. 08
Revision No : 2
3/4







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