(PDF) 2N3904 Datasheet PDF | KEC





2N3904 Datasheet PDF

Part Number 2N3904
Description EPITAXIAL PLANAR NPN TRANSISTOR
Manufacture KEC
Total Page 4 Pages
PDF Download Download 2N3904 Datasheet PDF

Features: Datasheet pdf SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . 2N3904 EPITAXIAL PLANAR NPN TRANSIST OR FEATURES Low Leakage Current : ICEX =50nA(Max.), IBL=50nA(Max.) @VCE=30V, V EB=3V. Excellent DC Current Gain Linear ity. Low Saturation Voltage : VCE(sat)= 0.3V(Max.) @IC=50mA, IB=5mA. Low Collec tor Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906. MAXI MUM RATING (Ta=25 ) CHARACTERISTIC SY MBOL Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Co llector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipatio n Ta=25 Tc=25 *PC Junction Temperatu re Storage Temperature Range *Cu Lead-F rame : 625mW(@Ta=25 ) 1.5W(@Tc=25 ) Fe Lead-Frame : 400mW(@Ta=25 ) 1.0W(@Tc=25 ) Tj Tstg RATING 60 40 6 200 50 625 400 1.5 1.0 150 -55 150 UNIT V V V mA mA mW W 2013. 7. 08 Revision No : 2 1/4 2N3904 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Base Cut-off Current Coll.

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2N3904 datasheet
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
*PC
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW(@Ta=25 )
1.5W(@Tc=25 )
Fe Lead-Frame : 400mW(@Ta=25 )
1.0W(@Tc=25 )
Tj
Tstg
RATING
60
40
6
200
50
625
400
1.5
1.0
150
-55 150
UNIT
V
V
V
mA
mA
mW
W
2013. 7. 08
Revision No : 2
1/4

2N3904 datasheet
2N3904
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
*
ICEX
IBL
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
hie
hre
hfe
hoe
NF
VCE=30V, VEB=3V
VCE=30V, VEB=3V
IC=10 A, IE=0
IC=1mA, IB=0
IE=10 A, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
VCE=10V, IC=1mA, f=1kHz
VCE=5V, IC=0.1mA Rg=1k ,
f=10Hz 15.7kHz
Delay Time
td
Switching Time
Rise Time
Storage Time
tr
tstg
Fall Time
tf
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
MIN.
-
-
60
40
6.0
40
70
100
60
30
-
-
0.65
-
300
-
-
1.0
0.5
100
1.0
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
50
-
-
-
-
-
300
-
-
0.2
0.3
0.85
0.95
-
4.0
8.0
10
8.0
400
40
UNIT
nA
nA
V
V
V
V
V
MHz
pF
pF
k
x10-4
- - 5.0 dB
- - 35
- - 35
nS
- - 200
- - 50
2013. 7. 08
Revision No : 2
2/4





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