2N3866 Transistor Datasheet

2N3866 Datasheet, PDF, Equivalent


Part Number

2N3866

Description

Silicon NPN Power Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download 2N3866 Datasheet


2N3866
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
DESCRIPTION
·This type is primarily intended for class-A, B or C amplifiers,
Frequency multiplier and oscillator circuits.
·High Gain Bandwidth Product
fT= 500 MHz (Min.)
·Low Collector Capacitance;
CC = 3 pF Max.
APPLICATIONS
·Designed for use in output, driver or pre-driver stages in
VHF and UHF equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
55 V
VCER
Collector-Emitter Voltage RBE= 10Ω
55
V
VCEO Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
3.5 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
0.4 A
3.5 W
200
Tstg Storage Temperature Range
-65~+200
isc websitewww.iscsemi.cn
1

2N3866
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
30
V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω
55
V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0
55
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
3.5
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 20mA
ICEO Collector Cutoff Current
VCE= 28V; IB= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 5V
10
hFE-2
DC Current Gain
IC= 360mA ; VCE= 5V
5
fT
Current-Gain—Bandwidth Product
IC= 50mA; VCE= 15V,f = 200MHz
500
CC Output Capacitance
IE= 0; VCB= 28V; f= 1MHz
V
V
V
V
1.0 V
20 μA
200
MHz
3 pF
isc websitewww.iscsemi.cn
2


Features INCHANGE Semiconductor isc RF Product S pecification isc Silicon NPN Planar Ep itaxial Overlay Transistor 2N3866 DES CRIPTION ·This type is primarily inten ded for class-A, B or C amplifiers, Fre quency multiplier and oscillator circui ts. ·High Gain Bandwidth Product fT= 5 00 MHz (Min.) ·Low Collector Capacitan ce; CC = 3 pF Max. APPLICATIONS ·Desig ned for use in output, driver or pre-dr iver stages in VHF and UHF equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VCBO Colle ctor-Base Voltage 55 V VCER Collecto r-Emitter Voltage RBE= 10Ω 55 V VCE O Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3.5 V IC Colle ctor Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junctio n Temperature 0.4 A 3.5 W 200 ℃ Tst g Storage Temperature Range -65~+200 ℃ isc website:www.iscsemi.cn 1 I NCHANGE Semiconductor isc RF Product S pecification isc Silicon NPN Planar Ep itaxial Overlay Transistor 2N3866 ELECTRICAL CHARACTERISTICS TC=25℃ unless o.
Keywords 2N3866, datasheet, pdf, Inchange Semiconductor, Silicon, NPN, Power, Transistor, N3866, 3866, 866, 2N386, 2N38, 2N3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)