Planar Transistors. HBA1514S6R Datasheet

HBA1514S6R Transistors. Datasheet pdf. Equivalent

HBA1514S6R Datasheet
Recommendation HBA1514S6R Datasheet
Part HBA1514S6R
Description General Purpose PNP Epitaxial Planar Transistors
Feature HBA1514S6R; CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBA151.
Manufacture Cystech Electonics
Datasheet
Download HBA1514S6R Datasheet




Cystech Electonics HBA1514S6R
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
(dual transistors)
HBA1514S6R
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 1/7
Features
Two BTA1514 chips in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Complementary to HBC3906S6R.
Pb-free lead plating and halogen-free package.
Symbol
HBA1514S6R
Outline
SOT-363R
Ordering Information
Device
HBA1514S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBA1514S6R
CYStek Product Specification



Cystech Electonics HBA1514S6R
CYStech Electronics Corp.
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 2/7
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : 150mW per element must not be exceeded
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj ; Tstg
Limits
-180
-160
-5
-0.6
200 (Note )
625
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
hFE 1
hFE 2
hFE 3
hFE 4
fT
Cob
Min.
-180
-160
-5
-
-
-
-
-
-
100
100
50
120
100
-
Typ.
-
-
-
-
-
0.11
0.25
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.16
-0.3
-1
-1
-
-
-
270
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-120V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-6V, IC=-2mA
VCE=-30V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBA1514S6R
CYStek Product Specification



Cystech Electonics HBA1514S6R
CYStech Electronics Corp.
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 3/7
Typical Characteristics
1000
100
Current Gain vs Collector Current
HFE
VCE=6V
VCE=5V
10000
1000
Saturation Voltage vs Collector Current
VCE(SAT)@IC=10IB
10
VCE=1V
1
0.1
1000
1 10 100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=10IB
100
1
1000
10 100
Collector Current---IC(mA)
1000
Cutoff Frequency vs Collector Current
fT@VCE=10V
100
100
1
100
10 100
Collector Current---IC(mA)
Capacitance Characteristics
1000
Cib
10
fT=1MHz
Cob
1
0.1
1 10
Reverse Biased Voltage---VCB, VEB(V)
100
10
0.1
250
200
150
100
50
0
0
1 10
Collector Current---IC(mA)
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature --- Ta(℃ )
100
200
HBA1514S6R
CYStek Product Specification







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)