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BU508A-2

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor BU508A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V...

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