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3DG9013

NPN EPITAXIAL SILICON TRANSISTOR

Description

NPN NPN EPITAXIAL SILICON TRANSISTOR R 3DG9013 MAIN CHARACTERISTICS Package IC VCEO PC 500mA 20V 625mW APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit z z z 3DG9012 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG9012 z RoHS...

JILIN SINO

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