PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES RDS(ON), VGS@10V,IDS@30A=13mΩ RDS(ON), VGS@4.5V,IDS@30A=18mΩ
Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Converters and Power Motor Controls Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above c...
