DatasheetsPDF.com



Part Number IXTQ450P2
Manufacturers IXYS
Logo IXYS
Description Power MOSFETs
Datasheet IXTQ450P2 DatasheetIXTQ450P2 Datasheet (PDF)

  IXTQ450P2   IXTQ450P2
Polar2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP450P2 IXTQ450P2 IXTH450P2 VDSS ID25 RDS(on) trr(typ) = = ≤ = 500V 16A 330mΩ 400ns TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-220 TO-3P TO-247 Maximum Ratings 500 500 V V ± 30 V ± 40 V 16 A 48 A 16 A 750 mJ 10 V/ns 300 W -55 ... +150 150 -55 ... +150 300 260 °C °C °C °C °C 1.13/10 3.0 5.5 6.0 Nm/lb.in. g g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characterist.



IXTP450P2 IXTQ450P2 IXTH450P2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)