P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ @VGS = -4.5V, TA = +25°C)
Features and Benefits
Built-in G-S Protection Diode against ESD 2kV HBM
Ultra Small 0.8mm x 0.8mm Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications. It is a High performance MOSFET in ultra-small 0.8mm
Power Management Functions
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
UBM Opening: 203m
Ordering Information (Note 4)
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
9W = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Document number: DS38339 Rev. 2 - 2
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