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KSD986

Silicon NPN Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD986 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A...

Inchange Semiconductor

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