INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR901L
DESCRIPTION ·Low Noise ·High Power Gain-
Gpe = 12.0 dB TYP. @ f = 1 GHz
APPLICATIONS ·Designed for use in high gain ,low noise , small signal
amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base...