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MMBR901L

Inchange Semiconductor

Silicon NPN RF Transistor


Description
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR901L DESCRIPTION ·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base...



Inchange Semiconductor

MMBR901L

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