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BUX41N

Part Number	BUX41N
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 12, 2016
Detailed Description	isc Silicon NPN Power Transistor BUX41N DESCRIPTION · Collector-Emitter Voltage- : VCEO= 160V(Min) ·High Current Capab...
Datasheet	BUX41N PDF File

Overview

isc Silicon NPN Power Transistor BUX41N DESCRIPTION · Collector-Emitter Voltage- : VCEO= 160V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 160 V VCEX Collector-Emitter Voltage VBE= -1.
5V 220 V VCER Collector-Emitter Voltage RBE= 100Ω 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 18 A ICM Collector Current-Peak 25 A IB Base Current-Continuous P...

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