N-Channel Enhancement Mode Field Effect Transistor
Description
CEA3055L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 3.7A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 120mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
D
D SOT-89
S
D G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
...
