N-Channel Enhancement Mode Field Effect Transistor
Description
CEPF630/CEBF630 CEFF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEPF630 CEBF630 CEFF630
VDSS 200V 200V
200V
RDS(ON) 0.35Ω 0.35Ω
0.35Ω
ID 10A 10A 10A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(D...
