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Part Number IXTT80N20L
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTT80N20L DatasheetIXTT80N20L Datasheet (PDF)

  IXTT80N20L   IXTT80N20L
LinearTM Power MOSFET w/ Extended FBSOA Advance Technical Information IXTT80N20L IXTH80N20L VDSS = 200V ID25 = 80A ≤RDS(on) 32mΩ N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM EIAAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TTCC = 25°C = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 200 200 V V ±20 V ±30 V 80 A 340 A 80 A 2.5 J 520 W -55 to +150 +150 -55 to +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 200 V 2.0 4.0 V ±100 nA 25 μA 250 μA.



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