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CEM4953

Chino-Excel Technology
Part Number CEM4953
Manufacturer Chino-Excel Technology
Description Dual P-Channel Enhancement Mode MOSFET
Published Mar 23, 2005
Detailed Description CEM4953 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(O...
Datasheet PDF File CEM4953 PDF File

CEM4953
CEM4953

Overview
CEM4953 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.
9A, RDS(ON) = 53mΩ @VGS = -10V.
RDS(ON) = 83mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
RoHS compliant.
Surface mount Package.
D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -4.
9 IDM -30 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units V V A A W C Units C/W Details are subject to change without notice .
1 Rev 2.
2017.
Mar.
http://www.
cetsemi.
com CEM4953 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -30 -1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -4.
9A VGS = -4.
5V, ID = -3.
6A -1 -3 V 42 53 mΩ 62 83 mΩ Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss Crss VDS = -15V, VGS = 0V, f = 1.
0 MHz 640 130 95 pF pF pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = -15V, ID = -4.
9A, VGS = -10V Qgd Drain-Source Diode Characteristics and Maximun Ratings 11 20 ns 5 10 ns 30 60 ns 7 ...


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