X2-Class Power MOSFET
(Electrically Isolated Tab)
Advance Technical Information
IXTR102N65X2
VDSS = ID25 =
RDS(on)
650V 54A 33m
N-Channel Enhancement Mode Avalanche Rated
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
TJ TJM Tstg TL TSOLD VISOL
FC Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings 650 650
30 40
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C
54 204
25 3
330
50
-55 ... +150 150
-55 ... +150
A A
A J
W
V/ns
C C C
Maximum Lead Temperature for Soldering 300 °C
1.6 mm (0.062in.) from Case for 10s
260 °C
50/60 Hz, 1 Minute
2500 V
Mounting Force
20..120/4.5..27
N/lb
5g
ISOPLUS247 E153432
G DS
Isolated Tab
G = Gate D = Drain S = Source
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
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Rated
Low .