DatasheetsPDF.com



Part Number IXTR210P10T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTR210P10T DatasheetIXTR210P10T Datasheet (PDF)

  IXTR210P10T   IXTR210P10T
Preliminary Technical Information TrenchPTM Power MOSFET IXTR210P10T VDSS = ID25 = ≤RDS(on) -100V -195A 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings -100 -100 ±15 ±25 -195 -160 - 800 -100 3 V V V V A A A A J 10 595 - 55 ... +150 150 - 55 ... +150 300 260 2500 V/ns W °C °C °C °C °C V~ 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ .



IXTR20P50P IXTR210P10T IXTR30N25


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)