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MTE013N08E3

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp. Spec. No. : C161E3 Issued Date : 2016.01.17 Revised Date : 2016.02.19 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE013N08E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=10V, ID=20A Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compl...

Cystech Electonics

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