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MTE016N15E3
N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N15E3 BVDSS Features Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and RoHS co...
Cystech Electonics
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MTE016N15E3
N-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
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