Silicon Transistors. 2SA2197 Datasheet

2SA2197 Datasheet PDF, Equivalent


Part Number

2SA2197

Description

PNP / NPN Epitaxial Planar Silicon Transistors

Manufacture

ON Semiconductor

Total Page 5 Pages
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Download 2SA2197 Datasheet PDF


2SA2197 Datasheet
2SA2197 / 2SC6102
Ordering number : ENA0463
2SA2197 / 2SC6102 PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications ( ) : 2SA2197
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
Ratings
(--30)40
(--)30
(--)6
(--)7
(--)9
(--)1.2
1
10
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
200
Ratings
typ
max
Unit
(--)0.1 µA
(--)0.1 µA
560
(250)290
MHz
(52)40
pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com
Publication Order Number:
2SA2197_2SC6102/D

2SA2197 Datasheet
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
2SA2197 / 2SC6102
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(--)2.5A, IB=(--)50mA
VCE=(--)2.5V, IB=(--)50mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
(--30)40
(--)30
(--)6
Ratings
typ
(--160)125
(--)0.84
max
(--240)185
(--)1.2
(30)30
(190)320
(17)14
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7515-002
8.0
3.0 4.0
2.7
1.6
0.8
0.8
0.6
0.5
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
INPUT
50
VR
RB
+
100µF
RL
+
470µF
VBE= --5V
VCC=12V
20IB1= --20IB2=IC=2.5A
For PNP, the polarity is reversed.
123
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
--7
2SA2197
--6
IC -- VCE
--50mA
--40mA
--5 --30mA
--25mA
--4 --20mA
--15mA
--3
--10mA
--2
--5mA
--1
0 IB=0mA
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT11478
7
2SC6102
6
IC -- VCE
50mA 40mA
5
4
3
30mA
25mA
20mA
15mA
10mA
2 5mA
1
IB=0mA
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT11479
Rev.0 I Page 2 of 5 I www.onsemi.com


Features Datasheet pdf 2SA2197 / 2SC6102 Ordering number : ENA 0463 2SA2197 / 2SC6102 PNP / NPN Epita xial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor dr ivers, flash. Features • Adoption of MBIT process. • Large current capaci tance. • Low collector-to-emitter sat uration voltage. • High-speed switchi ng. • High allowable power dissipatio n. Specifications ( ) : 2SA2197 Absolu te Maximum Ratings at Ta=25°C Paramet er Collector-to-Base Voltage Collector- to-Emitter Voltage Emitter-to-Base Volt age Collector Current Collector Current (Pulse) Base Current Collector Dissipa tion Junction Temperature Storage Tempe rature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Electrical Chara cteristics at Ta=25°C Conditions Par ameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Ba ndwidth Product Output Capacitance Sym bol ICBO IEBO hFE fT Cob Conditions VC B=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(-.
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