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HY57V161610ET-I

Part Number	HY57V161610ET-I
Manufacturer	Hynix Semiconductor
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
Published	Sep 18, 2016
Detailed Description	HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Sy...
Datasheet	HY57V161610ET-I PDF File

Overview

HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth.
HY57V161610E is organized as 2banks of 524,288x16.
HY57V161610E is offering fully synchronous operation referenced to a positive edge clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number o...

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