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IXKC15N60C5

IXYS

Power MOSFET

Description
Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S ID25 = 15 A VDSS = 600 V RDS(on) max = 0.165 Ω ISOPLUS220TM G D S E72873 q isolated back surface MOSFET Symbol VDSS VGS ID25 ID90 EAS ...


IXYS

IXKC15N60C5

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