N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics
VDSS RDS(on)
55V 7.2mΩ(typ.)
ID 110A
Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL5508
Marking and Pin Assignm...
