Power MOSFET. 1HN04CH Datasheet

1HN04CH Datasheet PDF, Equivalent


Part Number

1HN04CH

Description

Power MOSFET

Manufacture

ON Semiconductor

Total Page 5 Pages
PDF Download
Download 1HN04CH Datasheet PDF


1HN04CH Datasheet
Ordering number : ENA0925C
1HN04CH
Power MOSFET
100V, 8, 270mA, Single N-Channel
http://onsemi.com
Features
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
PW10s, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm)
100
20
270
1080
0.6
150
V
V
mA
mA
W
C
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm20.8mm)
Symbol
RJA
Value
208
Unit
C/W
Electrical Characteristics at Ta 25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100A
VDS=10V, ID=140mA
ID=140mA, VGS=10V
ID=70mA, VGS=4V
VDS=20V, f=1MHz
min
100
1.2
Value
Unit
typ max
V
1 A
10 A
2.6 V
260 mS
6 8
6.8 9.8
15 pF
3.1 pF
0.9 pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72514HK TC-00003129/52114HK/42814TKIM/90507TIIM PE No.A0925-1/5

1HN04CH Datasheet
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
1HN04CH
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit
VDS=50V, VGS=10V, ID=270mA
IS=270mA, VGS=0V
Value
Unit
min typ max
10 ns
7.4 ns
58 ns
39 ns
0.9 nC
0.19
nC
0.26
nC
0.88
1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
1HN04CH-TL-W
Package
CPH3, SC-59
SOT-23, TO-236
Shipping
3,000
pcs. / reel
note
Pb-Free
and
Halogen Free
Packing Type:TL
Marking
Electrical Connection
Switching Time Test Circuit
No.A0925-2/5


Features Datasheet pdf Ordering number : ENA0925C 1HN04CH Power MOSFET 100V, 8Ω, 270mA, Single N-Cha nnel http://onsemi.com Features  4 V drive  Halogen free compliance S pecifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Con ditions Value Unit Drain to Source V oltage Gate to Source Voltage Drain Cur rent (DC) Drain Current (Pulse) Power D issipation Junction Temperature VDSS V GSS ID IDP PD Tj PW10s, duty cyc le1% When mounted on ceramic substra te (900mm20.8mm) 100 20 270 1080 0.6 150 V V mA mA W C Storage Tem perature Tstg This product is designe d to “ESD immunity < 200V*”, so ple ase take care when handling. * Machine Model 55 to +150 C Stresses ex ceeding those listed in the Maximum Rat ings table may damage the device. If an y of these limits are exceeded, device functionality should not be assumed, da mage may occur and reliability may be a ffected. Thermal Resistance Ratings Pa rameter Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) Symbol RJA .
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